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1

Vidian Canal: Analysis and Relationship to the Internal Carotid Artery

Allan D. Vescan, Carl H. Snyderman, Ricardo L. Carrau, Arlan Mintz, Paul Gardner, Barton Branstetter IV, Amin B. Kassam

Journal:

The Laryngoscope

Année:

2007

Langue:

english

Fichier:

PDF, 348 KB

english, 2007

2

Expanded endonasal approach: vidian canal as a landmark to the petrous internal carotid artery

A. B. Kassam, A. D. Vescan, R. L. Carrau, D. M. Prevedello, P. Gardner, A. H. Mintz, C. H. Snyderman, A. L. Rhoton

Année:

2008

Langue:

english

Fichier:

PDF, 10.30 MB

english, 2008

3

A Comprehensive Review of the Phytochemical, Pharmacological, and Toxicological Properties of Tribulus terrestris L.

ÈtefÄnescu, Ruxandra, Tero-Vescan, Amelia, Negroiu, AncuÈa, AuricÄ, Elena, Vari, Camil-Eugen

Journal:

Année:

2020

Fichier:

PDF, 962 KB

2020

4

MOVPE, processing and characterization of AlGaN/GaN HEMTs with different Al concentrations on silicon substrates

M. Fieger, M. Eickelkamp, L. Rahimzadeh Koshroo, Y. Dikme, A. Noculak, H. Kalisch, M. Heuken, R.H. Jansen, A. Vescan

Journal:

Journal of Crystal Growth

Année:

2007

Langue:

english

Fichier:

PDF, 184 KB

english, 2007

5

Actuator – sensor technology on “electronic grade” diamond films

P. Gluche, R. Leuner, A. Vescan, W. Ebert, E. Kohn, C. Rembe, S. aus der Wiesche, E. P. Hofer

Journal:

Microsystem Technologies

Année:

1998

Langue:

english

Fichier:

PDF, 474 KB

english, 1998

6

The Posterior Pedicle Inferior Turbinate Flap: A New Vascularized Flap for Skull Base Reconstruction

Felipe S. G. Fortes, Ricardo L. Carrau, Carl H. Snyderman, Daniel Prevedello, Allan Vescan, Arlan Mintz, Paul Gardner, Amin B. Kassam

Journal:

The Laryngoscope

Année:

2007

Langue:

english

Fichier:

PDF, 538 KB

english, 2007

7

Transpterygoid Transposition of a Temporoparietal Fascia Flap: A New Method for Skull Base Reconstruction after Endoscopic Expanded Endonasal Approaches

Felipe S. G. Fortes, Ricardo L. Carrau, Carl H. Snyderman, Amin Kassam, Daniel Prevedello, Allan Vescan, Arlan Mintz, Paul Gardner

Journal:

The Laryngoscope

Année:

2007

Langue:

english

Fichier:

PDF, 2.01 MB

english, 2007

8

Oxygen addition to fluorine based SiN etch process: Impact on the electrical properties of AlGaN/GaN 2DEG and transistor characteristics

H. Hahn, J. Achenbach, N. Ketteniss, A. Noculak, H. Kalisch, A. Vescan

Journal:

Solid-State Electronics

Année:

2012

Langue:

english

Fichier:

PDF, 804 KB

english, 2012

9

Corrections [In "The relation between the 3-D Bode plot and the Root Locus," which appeared in the February 2005 issue]

Ebert, W., Vescan, A., Borst, T.H., Kohn, E.

Journal:

IEEE Control Systems

Année:

2005

Langue:

english

Fichier:

PDF, 66 KB

english, 2005

10

The III-Nitride Double Heterostructure Revisited: Benefits for Threshold Voltage Engineering of MIS Devices

Hahn, Herwig, Funck, Carsten, Geipel, Sascha, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Année:

2016

Langue:

english

Fichier:

PDF, 2.71 MB

english, 2016

11

GIS model for identifying urban areas vulnerable to noise pollution: case study

Bilaşco, Ştefan, Govor, Corina, Roşca, Sanda, Vescan, Iuliu, Filip, Sorin, Fodorean, Ioan

Journal:

Frontiers of Earth Science

Année:

2017

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2017

12

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Marx, M., Grundmann, A., Lin, Y.-R., Andrzejewski, D., Kümmell, T., Bacher, G., Heuken, M., Kalisch, H., Vescan, A.

Journal:

Journal of Electronic Materials

Année:

2018

Langue:

english

Fichier:

PDF, 1.55 MB

english, 2018

13

Self-Aligned Process for Selectively Etched p-GaN-Gated AlGaN/GaN-on-Si HFETs

Lukens, Gerrit, Hahn, Herwig, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Année:

2018

Langue:

english

Fichier:

PDF, 2.06 MB

english, 2018

14

Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs

R. Dietrich, A. Vescan, A. Wieszt, H. Leier, K. S. Boutros, J. M. Redwing, K. Kornitzer, R. Freitag, T. Ebner, K. Thonke

Journal:

physica status solidi (a)

Année:

1999

Langue:

english

Fichier:

PDF, 136 KB

english, 1999

15

Experimental investigation of localized states in amorphous chalcogenide films

T. Boţilă, A. Vancu, M. Lăzărescu, L. Vescan, Gr. Ioanid, St. Slădaru

Journal:

Thin Solid Films

Année:

1972

Langue:

english

Fichier:

PDF, 188 KB

english, 1972

16

Photoluminescence of SiGe/Si quantum wells prepared by LPCVD

L. Vescan, K. Schmidt, C. Dieker, H.P. Tang, T. Vescan, H. Lüth

Journal:

Thin Solid Films

Année:

1992

Langue:

english

Fichier:

PDF, 498 KB

english, 1992

17

Formation techniques for porous silicon superlattices

St. Frohnhoff, M.G. Berger, M. Thönissen, C. Dieker, L. Vescan, H. Münder, H. Lüth

Journal:

Thin Solid Films

Année:

1995

Langue:

english

Fichier:

PDF, 461 KB

english, 1995

18

AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon (1 1 1) substrates

J.D Brown, Ric Borges, Edwin Piner, Andrei Vescan, Sameer Singhal, Robert Therrien

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 217 KB

english, 2002

19

Non-ohmic behaviour in amorphous germanium at high electric fields

N. Croitoru, L. Vescan

Journal:

Thin Solid Films

Année:

1969

Langue:

english

Fichier:

PDF, 439 KB

english, 1969

20

The effect of low-fidelity endoscopic sinus surgery simulators on surgical skill

Marta Wais, Eng Ooi, Randy M. Leung, Allan D. Vescan, John Lee, Ian J. Witterick

Journal:

International Forum of Allergy & Rhinology

Année:

2012

Langue:

english

Fichier:

PDF, 320 KB

english, 2012

21

High temperature, high voltage operation of diamond Schottky diode

Vescan, A., Daumiller, I., Gluche, P., Ebert, W., Kohn, E.

Journal:

Diamond and Related Materials

Année:

1998

Langue:

english

Fichier:

PDF, 399 KB

english, 1998

22

Imaging and resectability issues of sinonasal tumors

Singh, Navneet, Eskander, Antoine, Huang, Shao-Hui, Curtin, Hugh, Bartlett, Eric, Vescan, Allan, Kraus, Dennis, O’Sullivan, Brian, Gentili, Fred, Gullane, Patrick, Yu, Eugene

Journal:

Expert Review of Anticancer Therapy

Année:

2013

Langue:

english

Fichier:

PDF, 2.75 MB

english, 2013

23

Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Lecourt, Francois, Agboton, Alain, Ketteniss, Nico, Behmenburg, Hannes, Defrance, Nicolas, Hoel, Virginie, Kalisch, Holger, Vescan, Andrei, Heuken, Michael, De Jaeger, Jean-Claude

Journal:

IEEE Electron Device Letters

Année:

2013

Langue:

english

Fichier:

PDF, 321 KB

english, 2013

24

p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Hollander, Bernd, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 2.90 MB

english, 2013

25

Application of highly oriented, planar diamond (HOD) films of high mechanical strength in sensor technologies

Gluche, P., Adamschik, M., Vescan, A., Ebert, W., Szücs, F., Fecht, H.J., Flöter, A., Zachai, R., Kohn, E.

Journal:

Diamond and Related Materials

Année:

1998

Langue:

english

Fichier:

PDF, 987 KB

english, 1998

26

Electrical characterisation of diamond resistors etched by RIE

Vescan, A., Ebert, W., Borst, T.H., Kohn, E.

Journal:

Diamond and Related Materials

Année:

1996

Langue:

english

Fichier:

PDF, 465 KB

english, 1996

27

Heat-spreading diamond films for GaN-based high-power transistor devices

Seelmann-Eggebert, M., Meisen, P., Schaudel, F., Koidl, P., Vescan, A., Leier, H.

Journal:

Diamond and Related Materials

Année:

2001

Langue:

english

Fichier:

PDF, 312 KB

english, 2001

28

Measurement of stress in a synthetic diamond substrate using the photoelastic method

Liang, Hancheng, Vescan, Andrei, Kohn, Erhard, Chin, Ken K.

Journal:

Diamond and Related Materials

Année:

1996

Langue:

english

Fichier:

PDF, 451 KB

english, 1996

29

Diamond junction FETs based on δ-doped channels

Aleksov, A, Vescan, A, Kunze, M, Gluche, P, Ebert, W, Kohn, E, Bergmeier, A, Dollinger, G

Journal:

Diamond and Related Materials

Année:

1999

Langue:

english

Fichier:

PDF, 209 KB

english, 1999

30

High-voltage Schottky diode on epitaxial diamond layer

Ebert, W., Vescan, A., Gluche, P., Borst, T., Kohn, E.

Journal:

Diamond and Related Materials

Année:

1997

Langue:

english

Fichier:

PDF, 409 KB

english, 1997

31

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors

Hahn, H., Reuters, B., Kotzea, S., Lukens, G., Geipel, S., Kalisch, H., Vescan, A.

Année:

2014

Langue:

english

Fichier:

PDF, 173 KB

english, 2014

32

[IEEE 1997 55th Annual Device Research Conference Digest - Fort Collins, CO, USA (23-25 June 1997)] 1997 55th Annual Device Research Conference Digest - 1000°C operation of diamond Schottky diode

Vescan, A., Daumiller, I., Gluche, P., Ebert, W., Kohn, E.

Année:

1997

Langue:

english

Fichier:

PDF, 130 KB

english, 1997

33

[IEEE 2008 International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (2008.10.12-2008.10.16)] 2008 International Conference on Advanced Semiconductor Devices and Microsystems - Processing and characterization of recessed-gate AlGaN/GaN HFETs

KetteniB, N., Eickelkamp, M., Noculak, A., Jansen, R.H., Vescan, A.

Année:

2008

Langue:

english

Fichier:

PDF, 925 KB

english, 2008

34

[IEEE ASDAM'02 (4th International Conference on Advanced Semiconductor Devices and Microsystems) - Smolenice Castle, Slovakia (14-16 Oct. 2002)] The Fourth International Conference on Advanced Semiconductor Devices and Microsystem - Thin low-temperature gate oxides for vertical field-effect transistors

Goryll, M., Moers, J., Trellenkamp, St., Vescan, L., Marso, M., Kordos, P., Luth, H.

Année:

2002

Langue:

english

Fichier:

PDF, 121 KB

english, 2002

35

Diamond surface-channel FET structure with 200 V breakdown voltage

Gluche, P., Aleksov, A., Vescan, A., Ebert, W., Kohn, E.

Journal:

IEEE Electron Device Letters

Année:

1997

Langue:

english

Fichier:

PDF, 66 KB

english, 1997

36

Very high temperature operation of diamond Schottky diode

Vescan, A., Daumiller, I., Gluche, P., Ebert, W., Kohn, E.

Journal:

IEEE Electron Device Letters

Année:

1997

Langue:

english

Fichier:

PDF, 53 KB

english, 1997

37

Highly rectifying Au-contacts on diamond-on-silicon substrate

Gluche, P., Wolter, S.D., Borst, T.H., Ebert, W., Vescan, A., Kohn, E.

Journal:

IEEE Electron Device Letters

Année:

1996

Langue:

english

Fichier:

PDF, 581 KB

english, 1996

38

High-temperature, high-voltage operation of pulse-doped diamond MESFET

Vescan, A., Gluche, P., Ebert, W., Kohn, E.

Journal:

IEEE Electron Device Letters

Année:

1997

Langue:

english

Fichier:

PDF, 93 KB

english, 1997

39

/Si heterostructures

Hartmann, A., Vescan, L., Dieker, C., Stoica, T., Lüth, H.

Journal:

Physical Review B

Année:

1993

Langue:

english

Fichier:

PDF, 417 KB

english, 1993

40

/Si heterostructures

Loo, R., Vescan, L., Hartmann, A., Apetz, R., Zastrow, U., Schäpers, T., Leuther, A., Dieker, C., Lüth, H., Gartner, P., Stoica, T.

Journal:

Physical Review B

Année:

1994

Langue:

english

Fichier:

PDF, 817 KB

english, 1994

41

[IEEE 1997 55th Annual Device Research Conference Digest - Fort Collins, CO, USA (23-25 June 1997)] 1997 55th Annual Device Research Conference Digest - First diamond power FET structure

Gluche, P., Aleksov, A., Vescan, A., Ebert, W., Birk, M., Kohn, E.

Année:

1997

Langue:

english

Fichier:

PDF, 147 KB

english, 1997

42

Electrical properties of thermally oxidized AlInN/AlN/GaN-based metal oxide semiconductor hetero field effect transistors

Eickelkamp, M., Weingarten, M., Rahimzadeh Khoshroo, L., Ketteniss, N., Behmenburg, H., Heuken, M., Donoval, D., Chvála, A., Kordoš, P., Kalisch, H., Vescan, A.

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 1011 KB

english, 2011

43

Threshold Voltage Engineering in GaN-Based HFETs: A Systematic Study With the Threshold Voltage Reaching More Than 2 V

Hahn, Herwig, Benkhelifa, Fouad, Ambacher, Oliver, Brunner, Frank, Noculak, Achim, Kalisch, Holger, Vescan, Andrei

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 2.09 MB

english, 2015

44

Recessed-Gate Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistors on Si with Record DC Performance

Hahn, Herwig, Lükens, Gerrit, Ketteniss, Nico, Kalisch, Holger, Vescan, Andrei

Journal:

Applied Physics Express

Année:

2011

Langue:

english

Fichier:

PDF, 620 KB

english, 2011

45

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces

Reuters, B, Hahn, H, Pooth, A, Holländer, B, Breuer, U, Heuken, M, Kalisch, H, Vescan, A

Journal:

Journal of Physics D Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 1.33 MB

english, 2014

46

AlGaN/AlN-GaN-SL HEMTs with Multiple 2DEG Channels

Wille, Ada, Yacoub, Hady, Debald, Arne, Kalisch, Holger, Vescan, Andrei

Journal:

Journal of Electronic Materials

Année:

2015

Langue:

english

Fichier:

PDF, 947 KB

english, 2015

47

Characterization of GaN-based p-channel device structures at elevated temperatures

Hahn, Herwig, Reuters, Benjamin, Pooth, Alexander, Kalisch, Holger, Vescan, Andrei

Journal:

Semiconductor Science and Technology

Année:

2014

Langue:

english

Fichier:

PDF, 54 KB

english, 2014

48

Selectively grown ohmic contacts to -doped diamond films

Vescan, A., Gluche, P., Ebert, W., Kohn, E.

Journal:

Electronics Letters

Année:

1996

Langue:

english

Fichier:

PDF, 133 KB

english, 1996

49

Experience with the expanded endonasal approach for resection of the odontoid process in rheumatoid disease

Nayak, Jayakar V., Gardner, Paul A., Vescan, Allan D., Carrau, Ricardo L., Kassam, Amin B., Snyderman, Carl H.

Journal:

American Journal of Rhinology

Année:

2007

Langue:

english

Fichier:

PDF, 2.75 MB

english, 2007

50

Fabrication of Highly Oriented, Smooth Diamond Films on Silicon for Electronic Devices

Wolter, S. D., Borst, T. H., Gluche, P., Ebert, W., Vescan, A., Kohn, E.

Journal:

MRS Proceedings

Année:

1996

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1996